Observations of segregation of Al in AlGaN alloys

doi:10.1002/1521-396X(200112)188:2<811

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DC 欄位	值	語言
dc.contributor.author	Chang, L	en_US
dc.contributor.author	Lai, SK	en_US
dc.contributor.author	Chen, FR	en_US
dc.contributor.author	Kai, JJ	en_US
dc.date.accessioned	2014-12-08T15:43:12Z	-
dc.date.available	2014-12-08T15:43:12Z	-
dc.date.issued	2001-11-23	en_US
dc.identifier.issn	0031-8965	en_US
dc.identifier.uri	http://hdl.handle.net/11536/29243	-
dc.identifier.uri	http://dx.doi.org/10.1002/1521-396X(200112)188:2<811	en_US
dc.description.abstract	Transmission electron microscopy has been used to characterize Al segregation in Al0.1Ga0.9N and Al0.3Ga0.7N alloys grown by metal organic chemical vapor deposition on 6H-SiC. It has been found that an interlayer of AlGaN alloy with much higher Al content was formed at first, followed by normal growth of nominal composition of AlGaN alloy. In Al0.1Ga0.9N and Al0.3Ga0.7N films. dislocation lines were also found to have more Al segregated than those regions free of dislocations in the matrix. Furthermore, it shows that more Al atoms segregate to an edge dislocation than to a screw one.	en_US
dc.language.iso	en_US	en_US
dc.title	Observations of segregation of Al in AlGaN alloys	en_US
dc.type	Article; Proceedings Paper	en_US
dc.identifier.doi	10.1002/1521-396X(200112)188:2<811	en_US
dc.identifier.journal	PHYSICA STATUS SOLIDI A-APPLIED RESEARCH	en_US
dc.citation.volume	188	en_US
dc.citation.issue	2	en_US
dc.citation.spage	811	en_US
dc.citation.epage	814	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000172779700071	-
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