完整後設資料紀錄
DC 欄位語言
dc.contributor.authorKuo, CTen_US
dc.contributor.authorWu, JYen_US
dc.contributor.authorLin, CHen_US
dc.contributor.authorLu, TRen_US
dc.contributor.authorSung, CMen_US
dc.date.accessioned2014-12-08T15:43:14Z-
dc.date.available2014-12-08T15:43:14Z-
dc.date.issued2001-11-01en_US
dc.identifier.issn0254-0584en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0254-0584(01)00418-7en_US
dc.identifier.urihttp://hdl.handle.net/11536/29258-
dc.description.abstractStructures and stress state of six commercial freestanding thick diamond films (> 300 mum) were analyzed by scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), and Raman spectroscopy. These films represent the typical samples synthesized by three different chemical vapor deposition (CVD) methods, including DC are, microwave plasma, and hot filament. It was found that the higher diamond deposition rate it reaches, the more non-diamond carbons it contains, and the larger the residual compressive stress it possesses. Moreover, the samples with the highest degree of optical transparency are under the lowest compressive stress. These crystal characteristics can be manipulated by selecting different deposition methods and parameters that affect nucleation rate and growth rate of diamond. The present results show that the DC are method gives poorly developed crystals, and its residual compressive stress of the films is the highest due to the fastest diamond nucleation and crystal growth rates. (C) 2001 Elsevier Science B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectplasma-assisted CVDen_US
dc.subjectmechanical propertiesen_US
dc.subjectX-ray diffractionen_US
dc.subjectoptical propertiesen_US
dc.titleInternal stresses and microstructures of commercial thick diamond films deposited by different deposition methodsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/S0254-0584(01)00418-7en_US
dc.identifier.journalMATERIALS CHEMISTRY AND PHYSICSen_US
dc.citation.volume72en_US
dc.citation.issue2en_US
dc.citation.spage114en_US
dc.citation.epage120en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000171822100003-
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