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dc.contributor.authorChen, CFen_US
dc.contributor.authorTsai, CLen_US
dc.contributor.authorLin, CLen_US
dc.date.accessioned2014-12-08T15:43:14Z-
dc.date.available2014-12-08T15:43:14Z-
dc.date.issued2001-11-01en_US
dc.identifier.issn0254-0584en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0254-0584(01)00438-2en_US
dc.identifier.urihttp://hdl.handle.net/11536/29260-
dc.description.abstractIn this work, we present a novel scheme that involves a new fabrication process of gate structure metal-insulator-semiconductor (MIS) diode using IC technology. We use a bias-assisted microwave plasma chemical vapor deposition (BAMPCVD) system to synthesize P-doped and B-doped diamond. Based on our experimental results, it showed dendrite-like diamond with non-doped and nanotube-like diamond with B- or P- doping. Doping phosphorus or boron can enhance its electric characteristic by reducing the turn-on voltage and enhancing the emission current density. The turn-on voltage of non-doped, B-doped and P-doped is 15, 8 and 5 V, respectively. The field emission current (I-a) of non-doped, B-doped and P-doped is 4 muA (at 45 V), 76 muA (at 77 V) and 322 muA (at 120 V), respectively. (C) 2001 Elsevier Science B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectfield emissionen_US
dc.subjectSEMen_US
dc.subjectCVDen_US
dc.titleElectronic properties of phosphorus-doped triode-type diamond field emission arraysen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/S0254-0584(01)00438-2en_US
dc.identifier.journalMATERIALS CHEMISTRY AND PHYSICSen_US
dc.citation.volume72en_US
dc.citation.issue2en_US
dc.citation.spage210en_US
dc.citation.epage213en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000171822100023-
Appears in Collections:Conferences Paper


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