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dc.contributor.authorChang, TCen_US
dc.contributor.authorMor, YSen_US
dc.contributor.authorLiu, PTen_US
dc.contributor.authorTsai, TMen_US
dc.contributor.authorChen, CWen_US
dc.contributor.authorSze, SMen_US
dc.contributor.authorMei, YJen_US
dc.date.accessioned2014-12-08T15:43:16Z-
dc.date.available2014-12-08T15:43:16Z-
dc.date.issued2001-11-01en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0040-6090(01)01331-1en_US
dc.identifier.urihttp://hdl.handle.net/11536/29282-
dc.description.abstractThe organic silsesquioxane, methylsilsesquioxane (MSQ), exhibits a low dielectric constant because of its lower film density compared with thermal oxide. In this study, boron implantation treatment is investigated in order to improve the quality of MSQ. The small size of boron atoms do not damage the chemical bonding of the MSQ film. In addition, the formation of densified surfaces after boron implantation can reduce the probability of moisture uptake into the MSQ. Therefore, the leakage current of MSQ film is significantly decreased and the low-k properties of MSQ film can be maintained. (C) 2001 Elsevier Science B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectmethylsilsesquioxaneen_US
dc.subjectdielectric constanten_US
dc.subjectboron implantationen_US
dc.titleImprovement of low dielectric constant methylsilsesquioxane by boron implantation treatmenten_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/S0040-6090(01)01331-1en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume398en_US
dc.citation.issueen_US
dc.citation.spage637en_US
dc.citation.epage640en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000172906200110-
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