Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Gou, YS | en_US |
dc.contributor.author | Zeng, HK | en_US |
dc.contributor.author | Juang, JY | en_US |
dc.contributor.author | Lin, JY | en_US |
dc.contributor.author | Wu, KH | en_US |
dc.contributor.author | Uen, TM | en_US |
dc.contributor.author | Li, HC | en_US |
dc.date.accessioned | 2014-12-08T15:43:17Z | - |
dc.date.available | 2014-12-08T15:43:17Z | - |
dc.date.issued | 2001-11-01 | en_US |
dc.identifier.issn | 0921-4534 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/S0921-4534(01)00808-5 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/29288 | - |
dc.description.abstract | We present a method to determine the temperature dependent London penetration depth measured by a microstrip ring resonator for YBCO thin films with various oxygen contents. It allows us to get the following important results of the superconducting properties in the underdoped cuprate superconductors. With increasing delta (e.g. delta = 0.05, 0.2, and 0.4), the superfluid density, lambda (2)(5 K) /lambda (2)(T), is linear in the low temperature range (T < T-c/3), and the slope changes with increasing oxygen deficiency. After the temperature normalization with respect to the critical temperature, the temperature dependence of the superfluid density is shown to be independent of doping concentration. Moreover the maximum energy gap can be estimated from the model of the d-wave pairing. We found that the ratio Delta /T-c is nearly fixed value, 3.0 +/- 0.4. (C) 2001 Elsevier Science B.V. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | YBCO | en_US |
dc.subject | penetration depth | en_US |
dc.subject | microstrip ring resonator | en_US |
dc.title | Determination of the doping dependence of the penetration depth using YBCO microstrip ring resonators | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.doi | 10.1016/S0921-4534(01)00808-5 | en_US |
dc.identifier.journal | PHYSICA C | en_US |
dc.citation.volume | 364 | en_US |
dc.citation.issue | en_US | |
dc.citation.spage | 408 | en_US |
dc.citation.epage | 410 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000172155700094 | - |
Appears in Collections: | Conferences Paper |
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