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dc.contributor.authorWu, KHen_US
dc.contributor.authorLin, PIen_US
dc.contributor.authorHsieh, CCen_US
dc.contributor.authorLiu, SJen_US
dc.contributor.authorJuang, JYen_US
dc.contributor.authorUen, TMen_US
dc.contributor.authorLin, JYen_US
dc.contributor.authorGou, YSen_US
dc.date.accessioned2014-12-08T15:43:17Z-
dc.date.available2014-12-08T15:43:17Z-
dc.date.issued2001-11-01en_US
dc.identifier.issn0921-4534en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0921-4534(01)00629-3en_US
dc.identifier.urihttp://hdl.handle.net/11536/29289-
dc.description.abstractYBa2Cu3O7 (YBCO)/TiN and YBCO/TiO2 bilayer structures have been prepared on SrTiO3 (STO)(100) substrates by in situ pulsed laser deposition (PLD). The TiN films were originally intended to serve as the lower contact electrode for studying the c-axis transport properties of YBCO thin films. It was found that, under the optimum conditions of depositing YBCO thin films, the TiN(100) layer was oxidized and transformed into rutile TiO2(110) film. On the other hand, pure anatase TiO2(001) films were prepared by PLD using a rutile TiO2(110) substrate as the target. YBCO films grown on both phases of TiO2 films show virtually the same transport properties of typical good quality singlelayer YBCO films. Comparative studies of depositing YBCO films directly onto a de-sputtered TiO2 template commonly used in the selective epitaxial growth process have, however, resulted in formation of a nonsuperconducting YBCO top layer. Experiments including interfacial X-ray absorption spectroscopy for determining the possible interactions occurring at the YBCO and TiO2 interface are reported. (C) 2001 Elsevier Science B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectTiN filmsen_US
dc.subjectTiO2 filmsen_US
dc.subjectoxidation of TiNen_US
dc.subjectpulsed laser depositionen_US
dc.subjectYBCO/TiO2/STO bilayer structureen_US
dc.subjectselective epitaxial growth techniqueen_US
dc.subjectX-ray absorption spectroscopyen_US
dc.titleSuperconducting YBa2Cu3O7 films grown on TiO2 buffer layers derived from various processesen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/S0921-4534(01)00629-3en_US
dc.identifier.journalPHYSICA Cen_US
dc.citation.volume363en_US
dc.citation.issue2en_US
dc.citation.spage119en_US
dc.citation.epage129en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000171761500007-
dc.citation.woscount0-
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