标题: | Comparison of novel cleaning solutions, with various chelating agents for post-CMP cleaning on poly-Si film |
作者: | Pan, TM Lei, TF Ko, FH Chao, TS Chiu, TH Lee, YH Lu, CP 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
关键字: | chelating agents;citric acid;CMP;EDTA;oxalic acid;particles and metallic impurities;TMAH |
公开日期: | 1-十一月-2001 |
摘要: | In this study, various cleaning solutions containing chelating agents with carboxyl acid group (-COOH), such as ethylenediaminetetraacetic acid, citric acid and oxalic acid, were developed for post-poly-Si CMP cleaning. The chelating agent and tetramethylammonium hydroxide (TMAH) were simultaneously added into 2% ammonium hydroxide alkaline solution to promote the removal efficiency on particles and metallic impurities. The effectiveness of various cleaning recipes and their interaction mechanism with poly-Si surface were studied. We could explain the surface behavior of various cleaning solutions by the different molecular size and charge of chelating agents. Based on the mechanism, the behavior of surface particle and metallic impurity can be realized. The co-existence of TMAH with citric acid or oxalic acid in the alkaline cleaning solutions can significantly enhance the electrical property for the capacitor. |
URI: | http://dx.doi.org/10.1109/66.964323 http://hdl.handle.net/11536/29310 |
ISSN: | 0894-6507 |
DOI: | 10.1109/66.964323 |
期刊: | IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING |
Volume: | 14 |
Issue: | 4 |
起始页: | 365 |
结束页: | 371 |
显示于类别: | Articles |
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