統計資料
總造訪次數
檢視 | |
---|---|
A comparative study of Ar and H-2 as carrier gases for the growth of SiC films on Si(100) by electron cyclotron resonance chemical vapor deposition at low temperature | 106 |
本月總瀏覽
七月 2024 | 八月 2024 | 九月 2024 | 十月 2024 | 十一月 2024 | 十二月 2024 | 一月 2025 | |
---|---|---|---|---|---|---|---|
A comparative study of Ar and H-2 as carrier gases for the growth of SiC films on Si(100) by electron cyclotron resonance chemical vapor deposition at low temperature | 0 | 0 | 0 | 0 | 0 | 1 | 0 |
檔案下載
檢視 | |
---|---|
000171738400021.pdf | 7 |
國家瀏覽排行
檢視 | |
---|---|
中國 | 97 |
美國 | 6 |
法國 | 1 |
愛爾蘭 | 1 |
縣市瀏覽排行
檢視 | |
---|---|
Shenzhen | 96 |
Kensington | 2 |
Menlo Park | 2 |
Chevilly-larue | 1 |
Edmond | 1 |
Shanghai | 1 |