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dc.contributor.authorLU, YYen_US
dc.contributor.authorLAI, CHen_US
dc.contributor.authorTSENG, TYen_US
dc.date.accessioned2014-12-08T15:04:26Z-
dc.date.available2014-12-08T15:04:26Z-
dc.date.issued1993-08-01en_US
dc.identifier.issn0167-577Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/2933-
dc.description.abstractThe influence of sintering profile, with emphasis on the effect of soaking treatment and cooling rate, on the resistivity of low-Curie-point positive temperature coefficient of resistivity (PTCR) ceramics has been investigated. Soaking treatment at 1200-degrees-C or slower cooling rate were found to result in an increase in the room-temperature and maximum values of resistivity in the resistivity-temperature characteristics. The surface acceptor density (N(s)), whose value was extracted from the capacitance-voltage measurement, was found to increase with soaking treatment at 1200-degrees-C or slower cooling rate. From derivations based on the Heywang-Jonker model, higher room-temperature and maximum resistivities are expected to occur as a result of increasing N(s), as confirmed by the experimental data.en_US
dc.language.isoen_USen_US
dc.titleINFLUENCE OF SINTERING PROFILE ON THE RESISTIVITY OF LOW-CURIE-POINT PTCR CERAMICSen_US
dc.typeArticleen_US
dc.identifier.journalMATERIALS LETTERSen_US
dc.citation.volume17en_US
dc.citation.issue3-4en_US
dc.citation.spage141en_US
dc.citation.epage145en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1993LV50000009-
dc.citation.woscount0-
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