完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | LU, YY | en_US |
dc.contributor.author | LAI, CH | en_US |
dc.contributor.author | TSENG, TY | en_US |
dc.date.accessioned | 2014-12-08T15:04:26Z | - |
dc.date.available | 2014-12-08T15:04:26Z | - |
dc.date.issued | 1993-08-01 | en_US |
dc.identifier.issn | 0167-577X | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/2933 | - |
dc.description.abstract | The influence of sintering profile, with emphasis on the effect of soaking treatment and cooling rate, on the resistivity of low-Curie-point positive temperature coefficient of resistivity (PTCR) ceramics has been investigated. Soaking treatment at 1200-degrees-C or slower cooling rate were found to result in an increase in the room-temperature and maximum values of resistivity in the resistivity-temperature characteristics. The surface acceptor density (N(s)), whose value was extracted from the capacitance-voltage measurement, was found to increase with soaking treatment at 1200-degrees-C or slower cooling rate. From derivations based on the Heywang-Jonker model, higher room-temperature and maximum resistivities are expected to occur as a result of increasing N(s), as confirmed by the experimental data. | en_US |
dc.language.iso | en_US | en_US |
dc.title | INFLUENCE OF SINTERING PROFILE ON THE RESISTIVITY OF LOW-CURIE-POINT PTCR CERAMICS | en_US |
dc.type | Article | en_US |
dc.identifier.journal | MATERIALS LETTERS | en_US |
dc.citation.volume | 17 | en_US |
dc.citation.issue | 3-4 | en_US |
dc.citation.spage | 141 | en_US |
dc.citation.epage | 145 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:A1993LV50000009 | - |
dc.citation.woscount | 0 | - |
顯示於類別: | 期刊論文 |