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dc.contributor.authorLee, HJen_US
dc.contributor.authorLin, EKen_US
dc.contributor.authorWu, WLen_US
dc.contributor.authorFanconi, BMen_US
dc.contributor.authorLan, JKen_US
dc.contributor.authorCheng, YLen_US
dc.contributor.authorLiou, HCen_US
dc.contributor.authorWang, YLen_US
dc.contributor.authorFeng, MSen_US
dc.contributor.authorChao, CGen_US
dc.date.accessioned2014-12-08T15:43:22Z-
dc.date.available2014-12-08T15:43:22Z-
dc.date.issued2001-10-01en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://dx.doi.org/10.1149/1.1396338en_US
dc.identifier.urihttp://hdl.handle.net/11536/29362-
dc.description.abstractThe density depth profile and chemical bond structure of hydrogen silsesquioxane (HSQ) thin films treated with an N-2 plasma with varying power and exposure time were measured using specular X-ray reflectivity (SXR) and Fourier transform infrared (FTIR) spectroscopy. The SXR data indicated that the density profile of an untreated HSQ film is not uniform. At least four layers with different electron densities were required to fit the SXR data. For HSQ films treated with either increasing plasma power or plasma exposure time, the film roughness increased and a densified layer was observed at the film/air interface. The thickness of the densified layer increased with both plasma power and plasma exposure time. In the FTIR spectra of the plasma-treated films, the intensities of the Si-O peaks due to the network structure and the Si-OH peak due to water absorption increased and the intensities of the Si-H peaks decreased. The FTIR data show that the plasma converts the HSQ structure into a SiO2-like structure and are consistent with the densification observed in the SXR measurements. In general, the HSQ film is more sensitive to increasing plasma power than to increasing plasma exposure time. (C) 2001 The Electrochemical Society.en_US
dc.language.isoen_USen_US
dc.titleX-ray reflectivity and FTIR measurements of N-2 plasma effects on the density profile of hydrogen silsesquioxane thin filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.1396338en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume148en_US
dc.citation.issue10en_US
dc.citation.spageF195en_US
dc.citation.epageF199en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000171501600049-
dc.citation.woscount27-
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