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dc.contributor.authorChen, CHen_US
dc.contributor.authorMeng, HFen_US
dc.date.accessioned2019-04-03T06:39:28Z-
dc.date.available2019-04-03T06:39:28Z-
dc.date.issued2001-09-15en_US
dc.identifier.issn1098-0121en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.64.125202en_US
dc.identifier.urihttp://hdl.handle.net/11536/29394-
dc.description.abstractWe study theoretically the exciton dissociation and carrier generation in conjugated polymers via defect Auger process, in which the electron (hole) of the exciton drops into the deep defect level while the energy is released to the hole (electron) through Coulomb scattering. Contrary to the usual Auger process among free carriers at high densities, defect Auger process for excitons takes place independent of the exciton density, and is identified as the dominant mechanism of photocarrier generation for excitation below the band gap. The dissociation probability for each passage through the defect is found to be close to one for excitons with thermal velocity, consistent with the picture that exciton decay in oxidized polymers is controlled by diffusion on a chain with quenching centers. We also study the reverse process, i.e., defect impact ionization, in which excitons or free electron hole pairs are created via the impact of hot holes (electrons) on electrons (holes) in the defect level. Excitons are found to be produced predominantly for driving electric field in a window around 10(5) V/cm along the chain. Light emission under unipolar carrier injection is predicted.en_US
dc.language.isoen_USen_US
dc.titleDefect Auger exciton dissociation and impact ionization in conjugated polymersen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.64.125202en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume64en_US
dc.citation.issue12en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000171244400051en_US
dc.citation.woscount5en_US
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