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dc.contributor.authorLin, CMen_US
dc.contributor.authorChuu, DSen_US
dc.date.accessioned2014-12-08T15:43:28Z-
dc.date.available2014-12-08T15:43:28Z-
dc.date.issued2001-09-01en_US
dc.identifier.issn0921-4526en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0921-4526(01)00547-6en_US
dc.identifier.urihttp://hdl.handle.net/11536/29419-
dc.description.abstractEnergy-dispersive X-ray-diffraction (EDXD) is used to study the pressure-induced transitions of Zn1-xMnxSe bulk samples, x = 0.016, 0.026, 0.053, 0.07, and 0.24, below 30 GPa. The EDXD results show that possible structure transitions from the zinc blende (B3) to the sodium chloride phase (B1) for Zn0.984Mn0.016Se. Zn0.974Mn0.026Se, Zn-0.947 Mn0.053Se, Zn0.93Mn0.07Se, and Zn0.76Mn0.24Se occur at 13.1, 12.4, 12.0, 11.8, and 9.6 GPa, respectively, The unloading run (the measurement with decreasing pressure) reveals that a reversible phase transition exists in the bulk Zn1-xMnxSe. In this work, our EDXD data show that the larger the increase of the fractional volume change at the phase transition from the B3 to the B1 region, the larger is the decrease of the reduction of the semiconductor-metal phase transition pressure. (C) 2001 Elsevier Science B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectpressure-induced phase transitionsen_US
dc.subjectZn1-xMnxSeen_US
dc.subjectEDXDen_US
dc.titlePressure-induced phase transitions in bulk Zn1-xMnxSeen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/S0921-4526(01)00547-6en_US
dc.identifier.journalPHYSICA Ben_US
dc.citation.volume304en_US
dc.citation.issue1-4en_US
dc.citation.spage221en_US
dc.citation.epage227en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000170591900029-
dc.citation.woscount8-
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