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dc.contributor.authorSung, WJen_US
dc.contributor.authorLiu, TYen_US
dc.contributor.authorYang, SLen_US
dc.contributor.authorHuang, KFen_US
dc.contributor.authorTseng, TYen_US
dc.contributor.authorChou, FIen_US
dc.contributor.authorWei, YYen_US
dc.contributor.authorWu, YRen_US
dc.date.accessioned2014-12-08T15:43:30Z-
dc.date.available2014-12-08T15:43:30Z-
dc.date.issued2001-09-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.40.5306en_US
dc.identifier.urihttp://hdl.handle.net/11536/29439-
dc.description.abstractDeep electron traps created by gamma-ray irradiation of Au/GaInP Schottky diodes grown by metal-organic chemical vapor deposition (MOCVD) were studied by using deep level transient spectroscopy (DLTS) technique. Three distinct deep electron traps, G1, G2 and G3, were observed in the irradiated GaInP samples. According to the analysis of trap properties in various samples. trap G1 is verified as a bulk defect located at 0.13 eV below the conduction band, while trap G2 and G3 are interface states originated from the junctions of Au/Te-doped GaInP contacts.en_US
dc.language.isoen_USen_US
dc.subjectGaInPen_US
dc.subjectgamma-rayen_US
dc.subjectirradiationen_US
dc.subjectdefecten_US
dc.subjecttrapen_US
dc.subjectdeep levelen_US
dc.subjectDLTSen_US
dc.titleGamma-ray induced deep electron traps in GaInPen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.40.5306en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume40en_US
dc.citation.issue9Aen_US
dc.citation.spage5306en_US
dc.citation.epage5307en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000171677200024-
dc.citation.woscount1-
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