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dc.contributor.authorKu, CYen_US
dc.contributor.authorLei, TFen_US
dc.contributor.authorCheng, DSen_US
dc.date.accessioned2014-12-08T15:43:30Z-
dc.date.available2014-12-08T15:43:30Z-
dc.date.issued2001-09-01en_US
dc.identifier.issn1071-1023en_US
dc.identifier.urihttp://dx.doi.org/10.1116/1.1404978en_US
dc.identifier.urihttp://hdl.handle.net/11536/29445-
dc.description.abstractIn this work we present a novel bar-in-bar (BIB) pattern to monitor the focus and tilting of exposure tools and production wafers. The inner and outer bars contain various hole sizes. When defocused, the shrinkage of the smaller patterns is more significant than that of the larger ones, thus causing the center of gravity to shift. Through the organization of the bar patterns, the centers of inner and outer bars shift in opposite directions when defocused. An overlay measurement tool can be used to easily measure the shift between the centers of inner and outer bars. Therefore, a second-order polynomial equation can precisely fit the measured BIB shift. In addition, an accurate and reliable focus value can be obtained with a maximum error of less than 0.05 mum by simply differentiating the fitting equation. The novel BIB has many applications, such as measuring field curvatures for exposure tools and determining best focus related information for production wafers. (C) 2001 American Vacuum Society.en_US
dc.language.isoen_USen_US
dc.titleMonitoring lithographic focus and tilting performance by off-line overlay measurement toolsen_US
dc.typeArticleen_US
dc.identifier.doi10.1116/1.1404978en_US
dc.identifier.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY Ben_US
dc.citation.volume19en_US
dc.citation.issue5en_US
dc.citation.spage1915en_US
dc.citation.epage1924en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000171804700041-
dc.citation.woscount0-
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