Observations of Al segregation around dislocations in AlGaN

doi:10.1063/1.1391409

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chang, L	en_US
dc.contributor.author	Lai, SK	en_US
dc.contributor.author	Chen, FR	en_US
dc.contributor.author	Kai, JJ	en_US
dc.date.accessioned	2014-12-08T15:43:34Z	-
dc.date.available	2014-12-08T15:43:34Z	-
dc.date.issued	2001-08-13	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.1391409	en_US
dc.identifier.uri	http://hdl.handle.net/11536/29456	-
dc.description.abstract	Transmission electron microscopy has been used to observe Al segregation around the threading dislocations in Al0.1Ga0.9N and Al0.3Ga0.7N grown by metalorganic chemical vapor deposition on 6H-SiC. Dislocation lines were found to have up to 70% more Al concentration than those regions free of dislocations in the matrix. The Al-depleted regions around the dislocations are shown to be within a few nanometers from the dislocation lines. The results also show that more Al segregate to edge dislocations than to screw ones. (C) 2001 American Institute of Physics.	en_US
dc.language.iso	en_US	en_US
dc.title	Observations of Al segregation around dislocations in AlGaN	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.1391409	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	79	en_US
dc.citation.issue	7	en_US
dc.citation.spage	928	en_US
dc.citation.epage	930	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000170277500012	-
dc.citation.woscount	11	-
顯示於類別：	期刊論文

文件中的檔案：

000170277500012.pdf

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。