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dc.contributor.authorCHEN, FHen_US
dc.contributor.authorTAI, MFen_US
dc.contributor.authorHORNG, WCen_US
dc.contributor.authorTSENG, TYen_US
dc.date.accessioned2019-04-03T06:37:22Z-
dc.date.available2019-04-03T06:37:22Z-
dc.date.issued1993-07-01en_US
dc.identifier.issn0163-1829en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.48.1258en_US
dc.identifier.urihttp://hdl.handle.net/11536/2947-
dc.description.abstractThe field-cooled magnetization of high-T(c) superconducting ceramics measured in low magnetic fields has exhibited an unusual phenomenon, i.e., the diamagnetic signal initially increases with a decrease in temperature but reaches a maximum at temperature T(d) and subsequently decreases with a decrease in temperature. In some samples the signal could even transform inversely into a paramagnetic regime once the sample was cooled below a temperature T(p), provided the applied field was sufficiently small. This phenomenon has been observed in various high-T(c) cuprates and been explained with different viewpoints. An alternative theoretical model was proposed in this work to account for these phenomena. The anomalous magnetization behavior in the present model was demonstrated to be a superposition of the diamagnetic signal, which occurs as a result of the intragranular shielding currents, and the paramagnetic signal, due to the induction of the intergranular component induced by these currents. The intergranular effect was demonstrated by this model to exist in granular superconductors. This intergranular effect would therefore be considered in evaluating the volume fraction of superconductivity for the samples from the Meissner signal, in particular, at a low magnetic field.en_US
dc.language.isoen_USen_US
dc.titleINTERPRETATION OF THE ANOMALOUS FIELD-COOLED-MAGNETIZATION BEHAVIOR OF HIGH-TEMPERATURE GRANULAR SUPERCONDUCTORS AT LOW MAGNETIC-FIELDen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.48.1258en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume48en_US
dc.citation.issue2en_US
dc.citation.spage1258en_US
dc.citation.epage1265en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1993LM88500068en_US
dc.citation.woscount3en_US
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