Full metadata record
DC FieldValueLanguage
dc.contributor.authorKu, CYen_US
dc.contributor.authorShieh, JMen_US
dc.contributor.authorChiou, TBen_US
dc.contributor.authorLin, HKen_US
dc.contributor.authorLei, TFen_US
dc.date.accessioned2014-12-08T15:43:37Z-
dc.date.available2014-12-08T15:43:37Z-
dc.date.issued2001-08-01en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://dx.doi.org/10.1149/1.1383557en_US
dc.identifier.urihttp://hdl.handle.net/11536/29491-
dc.description.abstractIn this investigation, a novel idea had been proposed to expand the process window and reduce the optical proximity effect (OPE) by employing post-exposure delay (PED). Our previous work presented a model to specify the resist linewidth according to PED time based on the neutralization mechanism of organic base and photogenerated acid. Based on the model, the exposure latitude and depth of focus can be extended for various pattern sizes by applying PED on linewidth broadening. Moreover, the dense-iso critical dimension bias, which is caused by OPE, can also be reduced when PED is performed. (C) 2001 The Electrochemical Society. [DOI: 10.1149/1.1383557] All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleExpanding the process window and reducing the optical proximity effect by post-exposure delayen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.1383557en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume148en_US
dc.citation.issue8en_US
dc.citation.spageG434en_US
dc.citation.epageG438en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000170400700053-
dc.citation.woscount0-
Appears in Collections:Articles


Files in This Item:

  1. 000170400700053.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.