1. You are Here：

Full metadata record
DC FieldValueLanguage
dc.contributor.authorChin, Aen_US
dc.contributor.authorYang, MYen_US
dc.contributor.authorSun, CLen_US
dc.contributor.authorChen, SYen_US
dc.date.accessioned2014-12-08T15:43:40Z-
dc.date.available2014-12-08T15:43:40Z-
dc.date.issued2001-07-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/55.930683en_US
dc.identifier.urihttp://hdl.handle.net/11536/29531-
dc.description.abstractWe have developed single transistor ferroelectric memory using stack gate PZT/Al2O3 structure. For the same similar to 40 Angstrom dielectric thickness, the PZT/Al2O3/Si gate dielectric has much better C-V characteristics and larger threshold voltage shift than those of PZT/SiO2/Si. Besides, the ferroelectric MOSFET also shows a large output current difference between programmed on state and erased off state, The <100 ns erase time is much faster than that of Flash memory where the switching time is limited by erase time.en_US
dc.language.isoen_USen_US
dc.subjectAl2O3en_US
dc.subjectferroelectricen_US
dc.subjectmemoryen_US
dc.subjectPZTen_US
dc.titleStack gate PZT/Al2O3 one transistor ferroelectric memoryen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/55.930683en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume22en_US
dc.citation.issue7en_US
dc.citation.spage336en_US
dc.citation.epage338en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000169452500010-
dc.citation.woscount51-
Appears in Collections:Articles


Files in This Item:

  1. 000169452500010.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.

Related Contents
Loading...