Stack gate PZT/Al2O3 one transistor ferroelectric memory

doi:10.1109/55.930683

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chin, A	en_US
dc.contributor.author	Yang, MY	en_US
dc.contributor.author	Sun, CL	en_US
dc.contributor.author	Chen, SY	en_US
dc.date.accessioned	2014-12-08T15:43:40Z	-
dc.date.available	2014-12-08T15:43:40Z	-
dc.date.issued	2001-07-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/55.930683	en_US
dc.identifier.uri	http://hdl.handle.net/11536/29531	-
dc.description.abstract	We have developed single transistor ferroelectric memory using stack gate PZT/Al2O3 structure. For the same similar to 40 Angstrom dielectric thickness, the PZT/Al2O3/Si gate dielectric has much better C-V characteristics and larger threshold voltage shift than those of PZT/SiO2/Si. Besides, the ferroelectric MOSFET also shows a large output current difference between programmed on state and erased off state, The <100 ns erase time is much faster than that of Flash memory where the switching time is limited by erase time.	en_US
dc.language.iso	en_US	en_US
dc.subject	Al2O3	en_US
dc.subject	ferroelectric	en_US
dc.subject	memory	en_US
dc.subject	PZT	en_US
dc.title	Stack gate PZT/Al2O3 one transistor ferroelectric memory	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/55.930683	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	22	en_US
dc.citation.issue	7	en_US
dc.citation.spage	336	en_US
dc.citation.epage	338	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000169452500010	-
dc.citation.woscount	51	-
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