Time-resolved photoluminescence study of InGaAs/GaAs quantum wells on (111)B GaAs substrates under magnetic fields

標題:	Time-resolved photoluminescence study of InGaAs/GaAs quantum wells on (111)B GaAs substrates under magnetic fields
作者:	Tsai, FY Lee, CP Voskoboynikov, O Cheng, HH Shen, JX Oka, Y 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	15-六月-2001
摘要:	The exciton dynamics in InxGa1-xAs/GaAs quantum wells grown on (111)B and (100) GaAs substrates were studied by time-resolved photoluminescence (PL) under magnetic fields in a Faraday configuration. We have found that the piezoelectric fields in (111)B samples affect the transient behavior of the PL spectra. Compared with the reference (100) sample, we have found that the strong piezoelectric fields, as well as the magnetic fields, cause a slower spin-flip process in (111)B strained quantum wells. (C) 2001 American Institute of Physics.
URI:	http://dx.doi.org/10.1063/1.1376401 http://hdl.handle.net/11536/29566
ISSN:	0021-8979
DOI:	10.1063/1.1376401
期刊:	JOURNAL OF APPLIED PHYSICS
Volume:	89
Issue:	12
起始頁:	7875
結束頁:	7878
顯示於類別：	期刊論文

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