完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Tsai, FY | en_US |
dc.contributor.author | Lee, CP | en_US |
dc.contributor.author | Voskoboynikov, O | en_US |
dc.contributor.author | Cheng, HH | en_US |
dc.contributor.author | Shen, JX | en_US |
dc.contributor.author | Oka, Y | en_US |
dc.date.accessioned | 2014-12-08T15:43:44Z | - |
dc.date.available | 2014-12-08T15:43:44Z | - |
dc.date.issued | 2001-06-15 | en_US |
dc.identifier.issn | 0021-8979 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.1376401 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/29566 | - |
dc.description.abstract | The exciton dynamics in InxGa1-xAs/GaAs quantum wells grown on (111)B and (100) GaAs substrates were studied by time-resolved photoluminescence (PL) under magnetic fields in a Faraday configuration. We have found that the piezoelectric fields in (111)B samples affect the transient behavior of the PL spectra. Compared with the reference (100) sample, we have found that the strong piezoelectric fields, as well as the magnetic fields, cause a slower spin-flip process in (111)B strained quantum wells. (C) 2001 American Institute of Physics. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Time-resolved photoluminescence study of InGaAs/GaAs quantum wells on (111)B GaAs substrates under magnetic fields | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.1376401 | en_US |
dc.identifier.journal | JOURNAL OF APPLIED PHYSICS | en_US |
dc.citation.volume | 89 | en_US |
dc.citation.issue | 12 | en_US |
dc.citation.spage | 7875 | en_US |
dc.citation.epage | 7878 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000169183500028 | - |
dc.citation.woscount | 1 | - |
顯示於類別: | 期刊論文 |