Time-resolved photoluminescence study of InGaAs/GaAs quantum wells on (111)B GaAs substrates under magnetic fields

doi:10.1063/1.1376401

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Tsai, FY	en_US
dc.contributor.author	Lee, CP	en_US
dc.contributor.author	Voskoboynikov, O	en_US
dc.contributor.author	Cheng, HH	en_US
dc.contributor.author	Shen, JX	en_US
dc.contributor.author	Oka, Y	en_US
dc.date.accessioned	2014-12-08T15:43:44Z	-
dc.date.available	2014-12-08T15:43:44Z	-
dc.date.issued	2001-06-15	en_US
dc.identifier.issn	0021-8979	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.1376401	en_US
dc.identifier.uri	http://hdl.handle.net/11536/29566	-
dc.description.abstract	The exciton dynamics in InxGa1-xAs/GaAs quantum wells grown on (111)B and (100) GaAs substrates were studied by time-resolved photoluminescence (PL) under magnetic fields in a Faraday configuration. We have found that the piezoelectric fields in (111)B samples affect the transient behavior of the PL spectra. Compared with the reference (100) sample, we have found that the strong piezoelectric fields, as well as the magnetic fields, cause a slower spin-flip process in (111)B strained quantum wells. (C) 2001 American Institute of Physics.	en_US
dc.language.iso	en_US	en_US
dc.title	Time-resolved photoluminescence study of InGaAs/GaAs quantum wells on (111)B GaAs substrates under magnetic fields	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.1376401	en_US
dc.identifier.journal	JOURNAL OF APPLIED PHYSICS	en_US
dc.citation.volume	89	en_US
dc.citation.issue	12	en_US
dc.citation.spage	7875	en_US
dc.citation.epage	7878	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000169183500028	-
dc.citation.woscount	1	-
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