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dc.contributor.authorWang, SYen_US
dc.contributor.authorLin, SDen_US
dc.contributor.authorWu, HWen_US
dc.contributor.authorLee, CPen_US
dc.date.accessioned2014-12-08T15:43:47Z-
dc.date.available2014-12-08T15:43:47Z-
dc.date.issued2001-06-01en_US
dc.identifier.issn1350-4495en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S1350-4495(01)00108-6en_US
dc.identifier.urihttp://hdl.handle.net/11536/29592-
dc.description.abstractLow dark current InAs/GaAs quantum dot infrared photodetector (QDIP) is demonstrated. The dark current reduced for over three orders of magnitude by introducing a thin AlGaAs current blocking layer. This thin AlGaAs can reduce the dark current much more than the response signal. The responsivity at 0.5 V is 0.08 A/W with peak at 6.5 mum and the corresponding detectivity about 2.5 x 10(9) cm Hz(1/2/W1/2). It is the highest detectivity reported for QDIP at 77 K. (C) 2001 Published by Elsevier Science B.V.en_US
dc.language.isoen_USen_US
dc.subjectquantum doten_US
dc.subjectintersubbanden_US
dc.subjectinfrared detectoren_US
dc.titleHigh performance InAs/GaAs quantum dot infrared photodetectors with AlGaAs current blocking layeren_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/S1350-4495(01)00108-6en_US
dc.identifier.journalINFRARED PHYSICS & TECHNOLOGYen_US
dc.citation.volume42en_US
dc.citation.issue3-5en_US
dc.citation.spage473en_US
dc.citation.epage477en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000169398200042-
Appears in Collections:Conferences Paper


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