Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Wang, SY | en_US |
dc.contributor.author | Lin, SD | en_US |
dc.contributor.author | Wu, HW | en_US |
dc.contributor.author | Lee, CP | en_US |
dc.date.accessioned | 2014-12-08T15:43:47Z | - |
dc.date.available | 2014-12-08T15:43:47Z | - |
dc.date.issued | 2001-06-01 | en_US |
dc.identifier.issn | 1350-4495 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/S1350-4495(01)00108-6 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/29592 | - |
dc.description.abstract | Low dark current InAs/GaAs quantum dot infrared photodetector (QDIP) is demonstrated. The dark current reduced for over three orders of magnitude by introducing a thin AlGaAs current blocking layer. This thin AlGaAs can reduce the dark current much more than the response signal. The responsivity at 0.5 V is 0.08 A/W with peak at 6.5 mum and the corresponding detectivity about 2.5 x 10(9) cm Hz(1/2/W1/2). It is the highest detectivity reported for QDIP at 77 K. (C) 2001 Published by Elsevier Science B.V. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | quantum dot | en_US |
dc.subject | intersubband | en_US |
dc.subject | infrared detector | en_US |
dc.title | High performance InAs/GaAs quantum dot infrared photodetectors with AlGaAs current blocking layer | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.doi | 10.1016/S1350-4495(01)00108-6 | en_US |
dc.identifier.journal | INFRARED PHYSICS & TECHNOLOGY | en_US |
dc.citation.volume | 42 | en_US |
dc.citation.issue | 3-5 | en_US |
dc.citation.spage | 473 | en_US |
dc.citation.epage | 477 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000169398200042 | - |
Appears in Collections: | Conferences Paper |
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