High performance InAs/GaAs quantum dot infrared photodetectors with AlGaAs current blocking layer

doi:10.1016/S1350-4495(01)00108-6

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DC 欄位	值	語言
dc.contributor.author	Wang, SY	en_US
dc.contributor.author	Lin, SD	en_US
dc.contributor.author	Wu, HW	en_US
dc.contributor.author	Lee, CP	en_US
dc.date.accessioned	2014-12-08T15:43:47Z	-
dc.date.available	2014-12-08T15:43:47Z	-
dc.date.issued	2001-06-01	en_US
dc.identifier.issn	1350-4495	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/S1350-4495(01)00108-6	en_US
dc.identifier.uri	http://hdl.handle.net/11536/29592	-
dc.description.abstract	Low dark current InAs/GaAs quantum dot infrared photodetector (QDIP) is demonstrated. The dark current reduced for over three orders of magnitude by introducing a thin AlGaAs current blocking layer. This thin AlGaAs can reduce the dark current much more than the response signal. The responsivity at 0.5 V is 0.08 A/W with peak at 6.5 mum and the corresponding detectivity about 2.5 x 10(9) cm Hz(1/2/W1/2). It is the highest detectivity reported for QDIP at 77 K. (C) 2001 Published by Elsevier Science B.V.	en_US
dc.language.iso	en_US	en_US
dc.subject	quantum dot	en_US
dc.subject	intersubband	en_US
dc.subject	infrared detector	en_US
dc.title	High performance InAs/GaAs quantum dot infrared photodetectors with AlGaAs current blocking layer	en_US
dc.type	Article; Proceedings Paper	en_US
dc.identifier.doi	10.1016/S1350-4495(01)00108-6	en_US
dc.identifier.journal	INFRARED PHYSICS & TECHNOLOGY	en_US
dc.citation.volume	42	en_US
dc.citation.issue	3-5	en_US
dc.citation.spage	473	en_US
dc.citation.epage	477	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000169398200042	-
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