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dc.contributor.authorTing, CCen_US
dc.contributor.authorChen, SYen_US
dc.date.accessioned2014-12-08T15:43:48Z-
dc.date.available2014-12-08T15:43:48Z-
dc.date.issued2001-06-01en_US
dc.identifier.issn0884-2914en_US
dc.identifier.urihttp://hdl.handle.net/11536/29614-
dc.description.abstractTiO2 thin films prepared by metalorganic decomposition (MOD-TIO,) and sol-gel processes (SG-TiO2) were investigated in terms of the anatase-to-rutile phase transformation and microstructural evolution. It was found that the chemical reactivity of the ligand groups initially coordinated on the titanium precursor plays a decisive role in the structure development of as-deposited SG- and MOD-TiO2 films. MOD-TiO2 films consist of small aggregated particles and therefore, tend to coalesce together to form an inhomogeneous microstructure during the anatase-to-rutile phase transformation. On the other hand, SG-TiO2 films consist of uniform large particles that tend to grow homogeneously. MOD-TiO2 films showed a higher crystallization temperature than the SG-TiO2 films but the temperature of the anatase-to-rutile phase transformation is much lower in MOD- (approximately 775 degreesC) as compared to SG-TIO, films (approximately 930 degreesC). The activation energy (Q) was estimated as 524 and 882 kJ/mol for the MOD- and SG-TIO, films, respectively, The lower transformation temperature and activation energy in MOD-TiO2 films were due to smaller grain size and more potential nucleation sites existing in the un-transformed MOD-TiO2 film structure, which can accelerate the rate of anatase-to-rutile transformation.en_US
dc.language.isoen_USen_US
dc.titleInfluence of ligand groups in Ti precursors on phase transformation and microstructural evolution of TiO2 thin films prepared by the wet chemical processen_US
dc.typeArticleen_US
dc.identifier.journalJOURNAL OF MATERIALS RESEARCHen_US
dc.citation.volume16en_US
dc.citation.issue6en_US
dc.citation.spage1712en_US
dc.citation.epage1719en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000169206600025-
dc.citation.woscount16-
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