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dc.contributor.authorHuang, Shiu-Mingen_US
dc.contributor.authorAkimoto, Hikotaen_US
dc.contributor.authorKono, Kimitoshien_US
dc.contributor.authorLin, Juhn-Jongen_US
dc.contributor.authorTarucha, Seigoen_US
dc.contributor.authorOno, Keijien_US
dc.date.accessioned2014-12-08T15:43:51Z-
dc.date.available2014-12-08T15:43:51Z-
dc.date.issued2008-04-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.47.3257en_US
dc.identifier.urihttp://hdl.handle.net/11536/29654-
dc.description.abstractWe measured electron transport state spectra of an In(0.05)Ga(0.95)As vertical double quantum dot. Both the ground and excited states of transport spectra from two electrons to three electrons are measured using a large source-drain voltage. In the obtained transition spectrum, the ground state transition from the 1S(2) singlet state to the 1S2P triplet state is observed at 5 T. Zeeman splitting with a g-factor of 0.36 is clearly observed at magnetic fields higher than 5 T. The observation of two Zeeman sublevels instead of three for the triplet state is explained by the spin selection rules for the S(Z) components between the two-electron and three-electron spin states. Transition with the total spin difference between the initial and final states larger than 1/2 is forbidden. Because the transition between doublet states is much longer than electron tunneling, both spin up and spin down can be the initial states from spin transitions. There are four transitions contributing to tunneling processes, but only two energy differences lead to the two Zeeman sublevels in the excitation spectra.en_US
dc.language.isoen_USen_US
dc.subjectquantum doten_US
dc.subjectspin selection ruleen_US
dc.titleSpin transport from doublet state to triplet state in vertical quantum dotsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1143/JJAP.47.3257en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume47en_US
dc.citation.issue4en_US
dc.citation.spage3257en_US
dc.citation.epage3260en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000255449100206-
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