統計資料
總造訪次數
| 檢視 | |
|---|---|
| Characterization of ultrathin oxynitride (18-21 angstrom) gate dielectrics by NH3 nitridation and N2O RTA treatment | 105 |
本月總瀏覽
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| 000168361000013.pdf | 8 |
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| 中國 | 97 |
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| Shenzhen | 96 |
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| 檢視 | |
|---|---|
| Characterization of ultrathin oxynitride (18-21 angstrom) gate dielectrics by NH3 nitridation and N2O RTA treatment | 105 |
| 檢視 | |
|---|---|
| 000168361000013.pdf | 8 |
| 檢視 | |
|---|---|
| 中國 | 97 |
| 美國 | 8 |
| 檢視 | |
|---|---|
| Shenzhen | 96 |
| Menlo Park | 5 |
| Kensington | 3 |
| Beijing | 1 |