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dc.contributor.authorChen, SCen_US
dc.contributor.authorShih, LYen_US
dc.contributor.authorChang, YCen_US
dc.contributor.authorTu, GCen_US
dc.contributor.authorLin, INen_US
dc.date.accessioned2014-12-08T15:43:54Z-
dc.date.available2014-12-08T15:43:54Z-
dc.date.issued2001-05-01en_US
dc.identifier.issn1071-1023en_US
dc.identifier.urihttp://dx.doi.org/10.1116/1.1375818en_US
dc.identifier.urihttp://hdl.handle.net/11536/29680-
dc.description.abstractA modified chemical vapor deposition process, which utilizes a susceptor to absorb the microwave and to self generate the heat, for heating up the Si substrate, was used for growing carbon nanotubes (CNTs). The advantage of such a process is that the deposition chamber can be maintained at around room temperature with only the substrates localized heated, such that the deposition temperature can be more precisely controlled. The influence of the pretreatment process for catalyst-coated Si substrates on growth behavior of CNTs and the related electron field emission properties were systematically examined. Among the form of catalyst used, the Fe(NO3)(3)-ethythersilicate mixture performs much better than the de sputtered Fe films. The higher the concentration of Fe species in the catalyst mixture, the denser the CNTs formed on the subs;rates, resulting in better held emission properties. Thus grown CNTs can be turned on at a very low field (E(0)congruent to0.78 V/mum), achieving a very large emission current density (J(e)congruent to 13 mA/cm(2)) at 5.5 V/mum applied field. (C) 2001 American Vacuum Society.en_US
dc.language.isoen_USen_US
dc.titleEffect of catalyst on growth behavior of carbon nanotube synthesizing by microwave heating thermal chemical vapor deposition processen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1116/1.1375818en_US
dc.identifier.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY Ben_US
dc.citation.volume19en_US
dc.citation.issue3en_US
dc.citation.spage1026en_US
dc.citation.epage1029en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000169366600082-
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