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dc.contributor.authorLin, PLen_US
dc.contributor.authorLiu, CWen_US
dc.contributor.authorHsieh, CCen_US
dc.contributor.authorWu, KHen_US
dc.contributor.authorJuang, JYen_US
dc.contributor.authorUen, TMen_US
dc.contributor.authorLin, JYen_US
dc.contributor.authorGou, YSen_US
dc.date.accessioned2014-12-08T15:43:56Z-
dc.date.available2014-12-08T15:43:56Z-
dc.date.issued2001-04-15en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.40.L377en_US
dc.identifier.urihttp://hdl.handle.net/11536/29708-
dc.description.abstractTitanium nitride (TiN) and superconducting YBa2Cu3O7 (YBCO) thin films have been deposited sequentially on SrTiO3(STO)(100) substrates by in situ pulsed laser ablation. The TiN films were originally intended to serve as the lower contact electrode of the c-axis YBCO thin films. It was found that, although high-quality YBCO films could be obtained with the YBCO/TiN/STO(100) bilayer structure, the TiN(100) layer was oxidized which changed the structure into YBCO/TiO2/STO(100) during YBCO deposition. Comparative studies of depositing YBCO films directly onto a dc-sputtered TiO2/STO(100) template conventionally used in the selective epitaxial growth (SEG) process have, however, resulted in formation of a nonsuperconducting YBCO top layer. The characteristics of the resultant TiO2 layers obtained using various processes were analyzed to delineate the apparent discrepancies.en_US
dc.language.isoen_USen_US
dc.subjectTiN filmsen_US
dc.subjectoxidation of TiNen_US
dc.subjectpulsed laser depositionen_US
dc.subjectYBCO/TiO2/STO bilayer structureen_US
dc.subjectselective epitaxial growth processen_US
dc.titleCharacteristics of YBa2Cu3O7 thin films deposited on substrates buffered by various TiO2 layersen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.40.L377en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERSen_US
dc.citation.volume40en_US
dc.citation.issue4Ben_US
dc.citation.spageL377en_US
dc.citation.epageL379en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000170777400005-
dc.citation.woscount5-
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