完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lin, PL | en_US |
dc.contributor.author | Liu, CW | en_US |
dc.contributor.author | Hsieh, CC | en_US |
dc.contributor.author | Wu, KH | en_US |
dc.contributor.author | Juang, JY | en_US |
dc.contributor.author | Uen, TM | en_US |
dc.contributor.author | Lin, JY | en_US |
dc.contributor.author | Gou, YS | en_US |
dc.date.accessioned | 2014-12-08T15:43:56Z | - |
dc.date.available | 2014-12-08T15:43:56Z | - |
dc.date.issued | 2001-04-15 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.40.L377 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/29708 | - |
dc.description.abstract | Titanium nitride (TiN) and superconducting YBa2Cu3O7 (YBCO) thin films have been deposited sequentially on SrTiO3(STO)(100) substrates by in situ pulsed laser ablation. The TiN films were originally intended to serve as the lower contact electrode of the c-axis YBCO thin films. It was found that, although high-quality YBCO films could be obtained with the YBCO/TiN/STO(100) bilayer structure, the TiN(100) layer was oxidized which changed the structure into YBCO/TiO2/STO(100) during YBCO deposition. Comparative studies of depositing YBCO films directly onto a dc-sputtered TiO2/STO(100) template conventionally used in the selective epitaxial growth (SEG) process have, however, resulted in formation of a nonsuperconducting YBCO top layer. The characteristics of the resultant TiO2 layers obtained using various processes were analyzed to delineate the apparent discrepancies. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | TiN films | en_US |
dc.subject | oxidation of TiN | en_US |
dc.subject | pulsed laser deposition | en_US |
dc.subject | YBCO/TiO2/STO bilayer structure | en_US |
dc.subject | selective epitaxial growth process | en_US |
dc.title | Characteristics of YBa2Cu3O7 thin films deposited on substrates buffered by various TiO2 layers | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1143/JJAP.40.L377 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | en_US |
dc.citation.volume | 40 | en_US |
dc.citation.issue | 4B | en_US |
dc.citation.spage | L377 | en_US |
dc.citation.epage | L379 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 物理研究所 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Institute of Physics | en_US |
dc.identifier.wosnumber | WOS:000170777400005 | - |
dc.citation.woscount | 5 | - |
顯示於類別: | 期刊論文 |