標題: | Investigation on microstructure in GaN epitaxial growth on the stripe-patterned r-plane sapphire substrates |
作者: | Chen, Hou-Guang Ko, Tsung-Shine Chang, Li Wu, Yue-Han Lu, Tien-Chang Kuo, Hao-Chung Wang, Shing-Chung 材料科學與工程學系 光電工程學系 Department of Materials Science and Engineering Department of Photonics |
關鍵字: | interface;line defects;metal-organic vapor-phase epitaxy;nitrides;semiconducting III-V materials |
公開日期: | 1-四月-2008 |
摘要: | This study reports on the reduction of dislocations in the GaN grown on the stripe-patterned r-plane sapphire substrates via metal-organic chemical vapor deposition (MOCVD). The stripes oriented along the sapphire [1 1 (2) over bar 0] direction with asymmetrical side faces were fabricated by lithographic and wet-etching processes. The two etching sides of sapphire-striped mesa are {0 0 0 1} and {1 (1) over bar 0 1} faces. GaN grown on both etching facets exhibits different epitaxial relationships with the sapphire substrate. The GaN grown from the {0 0 0 1} side face of the sapphire mesa contains a low-dislocation density in the order of 10(7) cm(-2). The interfacial regions between the GaN and patterned sapphire substrate are also studied to clarify the behavior of GaN epitaxial growth on the inclined sapphire faces and defect-reduction mechanism. (C) 2007 Elsevier B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.jcrysgro.2007.11.178 http://hdl.handle.net/11536/29720 |
ISSN: | 0022-0248 |
DOI: | 10.1016/j.jcrysgro.2007.11.178 |
期刊: | JOURNAL OF CRYSTAL GROWTH |
Volume: | 310 |
Issue: | 7-9 |
起始頁: | 1627 |
結束頁: | 1631 |
顯示於類別: | 會議論文 |