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dc.contributor.authorMeng, Chinchunen_US
dc.contributor.authorSyu, Jin-Siangen_US
dc.contributor.authorTseng, Sheng-Cheen_US
dc.contributor.authorChang, Yu-Wenen_US
dc.contributor.authorHuang, Guo-Weien_US
dc.date.accessioned2014-12-08T15:04:29Z-
dc.date.available2014-12-08T15:04:29Z-
dc.date.issued2008en_US
dc.identifier.isbn978-1-4244-1780-3en_US
dc.identifier.issn0149-645Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/2974-
dc.description.abstractThe SiGe heterojunction bipolar transistor (HBT) voltage controlled oscillators (VCOs) using trifilar-transformer feedback at emitters, bases and collectors are demonstrated. The integrated trifilar transformer can allow dual voltage swings across the collectors and emitters of a cross-coupled differential pair and separate the bias between bases and collectors to optimize the output power. The tank inductance is also improved by the mutual coupling of the trifilar transformer. Thus, 191 dBc/Hz FOM (figure of merit) is achieved and is comparable to that of the state-of-the-art VCO.en_US
dc.language.isoen_USen_US
dc.subjectSiGe heterojunction bipolar transistor (HBT)en_US
dc.subjecttrifilar transformeren_US
dc.subjectvoltage controlled oscillator (VCO)en_US
dc.subjectphase noiseen_US
dc.titleLow-Phase-Noise SiGe HBT VCOs Using Trifilar-Transformer Feedbacken_US
dc.typeProceedings Paperen_US
dc.identifier.journal2008 IEEE MTT-S International Microwave Symposium Digest, Vols 1-4en_US
dc.citation.spage249en_US
dc.citation.epage252en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000262480000063-
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