標題: ULTRATHIN TEXTURED POLYCRYSTALLINE OXIDE WITH A HIGH ELECTRON CONDUCTION EFFICIENCY PREPARED BY THERMAL-OXIDATION OF THIN POLYCRYSTALLINE SILICON FILM ON N+ POLYCRYSTALLINE SILICON
作者: WU, SL
LEE, CL
LEI, TF
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 28-Jun-1993
摘要: This letter presents an ultrathin textured polycrystalline oxide (polyoxide) (less-than-or-equal-to 100 angstrom) prepared by thermal oxidation of thin polycrystalline silicon (polysilicon) film on n+ polysilicon. The presented textured polyoxide exhibits a much higher electron injection efficiency, a much smaller electron trapping rate, and a much larger charge to breakdown than the normal polyoxide. The value of Q(bd) of the textured polyoxide could be more than 3000 C/cm2 even under 100 mA/cm2 stressing.
URI: http://dx.doi.org/10.1063/1.109004
http://hdl.handle.net/11536/2975
ISSN: 0003-6951
DOI: 10.1063/1.109004
期刊: APPLIED PHYSICS LETTERS
Volume: 62
Issue: 26
起始頁: 3491
結束頁: 3492
Appears in Collections:Articles