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dc.contributor.authorZeng, HKen_US
dc.contributor.authorJuang, JYen_US
dc.contributor.authorLin, JYen_US
dc.contributor.authorWu, KHen_US
dc.contributor.authorUen, TMen_US
dc.contributor.authorGou, YSen_US
dc.date.accessioned2014-12-08T15:44:03Z-
dc.date.available2014-12-08T15:44:03Z-
dc.date.issued2001-03-15en_US
dc.identifier.issn0921-4534en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0921-4534(00)01622-1en_US
dc.identifier.urihttp://hdl.handle.net/11536/29767-
dc.description.abstractYBa2Cu3O7-delta(YBCO) superconducting ring resonators with a YBCO ground plane were successfully fabricated using double-side YBCO films deposited on LaAlO3 (LAO) substrates. The temperature dependent London penetration depth, Delta lambda = lambda (T) - lambda (5 K), was systematically studied by varying the oxygen content of the same resonator structure. For fully oxygenated case (delta = 0.05), the resonator exhibits a quality factor Q > 10(4) at 16 K, and Delta lambda (T) displays a linear behavior over a wide range of temperatures. With increasing delta (e.g. delta = 0.2, 0.4), although Delta lambda is still linear in temperature, the slope changes with increasing oxygen deficiency. The results suggest that, in the underdoped regime, the inelastic scattering of charged carriers may become increasingly prominent. From the effective dielectric constant obtained from the ring resonator the dielectric constant of the LAO substrate was estimated to be epsilon (r) congruent to 25.5 at 5 K and a frequency of about 3.6 GHz. (C) 2001 Elsevier Science B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectmicrowave enhancementen_US
dc.subjectYBa2Cu3O7-deltaen_US
dc.subjectpenetration depthen_US
dc.subjecteffective dielectric constanten_US
dc.subjectmicrowave ring resonatorsen_US
dc.titleTemperature dependence of the penetration depth and effective dielectric constant measured by YBa2Cu3O7-delta microstrip ring resonatorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/S0921-4534(00)01622-1en_US
dc.identifier.journalPHYSICA Cen_US
dc.citation.volume351en_US
dc.citation.issue2en_US
dc.citation.spage97en_US
dc.citation.epage102en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000167638000003-
dc.citation.woscount5-
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