RF MAGNETRON-SPUTTERED INDIUM TIN OXIDE FILM ON A REACTIVELY ION-ETCHED ACRYLIC SUBSTRATE

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	CHIOU, BS	en_US
dc.contributor.author	HSIEH, ST	en_US
dc.date.accessioned	2014-12-08T15:04:29Z	-
dc.date.available	2014-12-08T15:04:29Z	-
dc.date.issued	1993-06-25	en_US
dc.identifier.issn	0040-6090	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2976	-
dc.description.abstract	Indium tin oxide (ITO) films were deposited onto acrylic substrates with r.f. magnetron sputtering. The substrate temperature was kept below 65-degrees-C and the sputtering power was 18 W to prevent the acrylic from deformation. The adhesion strength of the ITO film on acrylic is improved by reactive ion etching (RIE) of the substrate. However, the transmission of the ITO on RIE-treated acrylic is smaller than that of the ITO on as-received acrylic. A transmission of about 83% is obtained for this low temperature, low power processed ITO film. Both the absorption coefficient and the transition energy gap are evaluated. The figure of merit of films on acrylic substrates ranges from 11.4 to 38.6 x 10(-3) OMEGA-1.	en_US
dc.language.iso	en_US	en_US
dc.title	RF MAGNETRON-SPUTTERED INDIUM TIN OXIDE FILM ON A REACTIVELY ION-ETCHED ACRYLIC SUBSTRATE	en_US
dc.type	Article	en_US
dc.identifier.journal	THIN SOLID FILMS	en_US
dc.citation.volume	229	en_US
dc.citation.issue	2	en_US
dc.citation.spage	146	en_US
dc.citation.epage	155	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1993LJ79800004	-
dc.citation.woscount	48	-
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