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dc.contributor.authorWen, TCen_US
dc.contributor.authorLee, WIen_US
dc.contributor.authorSheu, JKen_US
dc.contributor.authorChi, GCen_US
dc.date.accessioned2014-12-08T15:44:07Z-
dc.date.available2014-12-08T15:44:07Z-
dc.date.issued2001-03-01en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0038-1101(01)00044-2en_US
dc.identifier.urihttp://hdl.handle.net/11536/29794-
dc.description.abstractThis study investigates the electrical and optical characteristics of Mg-doped InxGa1-xN grown by metalorganic chemical vapor deposition. All the Mg-doped InxGa1-xN layers show p-type conduction after thermal annealing. Room temperature (RT) carrier concentration increases exponentially with an In mole fraction increase. The highest hole concentration of bull; Mg-doped InxGa1-xN is 1.65 x 10(19) cm(-3). Also, the RT photoluminescence (PL) spectra of Mg related emissions in InxGa1-xN are displayed. However, the PL peak intensity becomes weak after the post-annealing process on Mg-doped InxGa1-xN. This degradation might be created by the surface dissociation during the post-annealing process. (C) 2001 Elsevier Science Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectMg-doped InxGa1-xNen_US
dc.subjectwall measurementen_US
dc.subjectcarrier concentrationen_US
dc.subjectmobilityen_US
dc.subjectin mole fractionen_US
dc.subjectphotoluminescenceen_US
dc.titleCharacterization of p-type InxGa1-xN grown by metalorganic chemical vapor depositionen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/S0038-1101(01)00044-2en_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.citation.volume45en_US
dc.citation.issue3en_US
dc.citation.spage427en_US
dc.citation.epage430en_US
dc.contributor.department友訊交大聯合研發中心zh_TW
dc.contributor.departmentD Link NCTU Joint Res Ctren_US
dc.identifier.wosnumberWOS:000168511700009-
dc.citation.woscount9-
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