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dc.contributor.authorNiu, H.en_US
dc.contributor.authorChen, C. H.en_US
dc.contributor.authorWang, H. Y.en_US
dc.contributor.authorWu, S. C.en_US
dc.contributor.authorLee, C. P.en_US
dc.date.accessioned2014-12-08T15:44:08Z-
dc.date.available2014-12-08T15:44:08Z-
dc.date.issued2008-04-01en_US
dc.identifier.issn0168-583Xen_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.nimb.2008.02.040en_US
dc.identifier.urihttp://hdl.handle.net/11536/29798-
dc.description.abstractThe microstructure changes of self-assembled InAs/GaAs quantum dots during RTA treatment was investigated using ion channeling and photoluminescence (PL). A small blueshift of the PL emission is observed for annealing temperatures of 650-800 degrees C and an obvious blueshift at 850 degrees C. The yield of channeled spectra decreased as annealing temperature was increased, but the yield increased while temperature above 800 degrees C in RTA. These results imply the strain of QD varied during RTA treatments. In addition, the As/Ga atomic ratio near the surface was determined from the surface peaks of the channeled spectrum. (c) 2008 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectquantum dotsen_US
dc.subjectGaAsen_US
dc.subjectInAsen_US
dc.subjection-channelingen_US
dc.titleIon beam studies of InAs/GaAs quantum dots after annealingen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.nimb.2008.02.040en_US
dc.identifier.journalNUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMSen_US
dc.citation.volume266en_US
dc.citation.issue8en_US
dc.citation.spage1235en_US
dc.citation.epage1237en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000256677600020-
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