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dc.contributor.authorWU, CCen_US
dc.contributor.authorLIN, KCen_US
dc.contributor.authorCHAN, SHen_US
dc.contributor.authorFENG, MSen_US
dc.contributor.authorCHANG, CYen_US
dc.date.accessioned2014-12-08T15:04:29Z-
dc.date.available2014-12-08T15:04:29Z-
dc.date.issued1993-06-20en_US
dc.identifier.issn0921-5107en_US
dc.identifier.urihttp://hdl.handle.net/11536/2979-
dc.description.abstractDEZn and H2Se were utilized as p- and n-type dopant sources for the growth in InGaP layers by low pressure metal-organic chemical vapor deposition (LP-MOCVD). The decrease in intensity of the extra spots of electron diffraction indicates that disordering is induced by the zinc doping. Streaky and wavy diffraction patterns demonstrate the formation of anti-phase domains caused by the Se dopant incorporation. The growth rate of the grown layer is reduced by more than 10% owing to the dopant incorporation. A photoluminescence emission energy difference of 141 meV between undoped and Zn-doped (5.8 x 10(18) cm-3) InGaP was obtained. The effects of doping on disordering, degeneracy of quasi-Fermi level and lattice constant reduction of grown layers were included in this study.en_US
dc.language.isoen_USen_US
dc.titleDOPING OF INGAP EPITAXIAL LAYERS GROWN BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITIONen_US
dc.typeArticleen_US
dc.identifier.journalMATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGYen_US
dc.citation.volume19en_US
dc.citation.issue3en_US
dc.citation.spage234en_US
dc.citation.epage239en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:A1993LK04600003-
dc.citation.woscount1-
Appears in Collections:Articles