標題: FREE-CARRIER ABSORPTION OF NONDEGENERATE SEMICONDUCTORS IN QUANTIZING MAGNETIC-FIELDS - NONPOLAR OPTICAL PHONON-SCATTERING
作者: WU, CC
LIN, CJ
應用數學系
電控工程研究所
Department of Applied Mathematics
Institute of Electrical and Control Engineering
公開日期: 15-六月-1993
摘要: The effect of nonpolar optical phonon scattering on the free-carrier absorption in n-type semiconductors such as germanium has been investigated quantum mechanically in quantizing magnetic fields. It is assumed that the energy band structure of electrons in semiconductors is nonparabolic and the dominant scattering mechanism for conduction electrons is of the nonpolar optical phonon scattering. When the radiation is polarized parallel to a dc magnetic field B, the absorption coefficient appears to be of a complex value due to the interaction between the radiation field and the optical phonon field in nondegenerate semiconductors. Results show that the real part of the absorption coefficient oscillates with the magnetic field in the high-field region, and imaginary part of the absorption coefficient appears with a few extremum points (peaks and dips) in high magnetic fields. These are different from those of the acoustic phonon scattering in III-V compound semiconductors such as InSb or GaAs, in which the absorption coefficient oscillates with the magnetic field in lower magnetic fields and then increases monotonically with the field.
URI: http://dx.doi.org/10.1063/1.353423
http://hdl.handle.net/11536/2981
ISSN: 0021-8979
DOI: 10.1063/1.353423
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 73
Issue: 12
起始頁: 8319
結束頁: 8323
顯示於類別:期刊論文