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dc.contributor.authorChen, CFen_US
dc.contributor.authorTsai, CLen_US
dc.contributor.authorLin, CLen_US
dc.date.accessioned2014-12-08T15:44:09Z-
dc.date.available2014-12-08T15:44:09Z-
dc.date.issued2001-03-01en_US
dc.identifier.issn0925-9635en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0925-9635(00)00606-3en_US
dc.identifier.urihttp://hdl.handle.net/11536/29815-
dc.description.abstractIn this work, we present a novel scheme that involves a new fabrication process for gate-structured metal-insulator-semiconductor (MIS) diodes using IC technology. Using a bias-assisted microwave-plasma chemical vapor deposition (BAMPCVD) system to synthesize P-doped emitters completes this process. A comparison of the held emission characteristics of two types of non-doped dendrite-like and P-doped nanotube-like diamond emitters with a 4-mum gate aperture is made. Phosphorus doping can enhance the electrical characteristics by reducing the turn-on voltage and enhancing the emission current density. The turn-on voltage of non-doped and P-doped emitters is 15 and 5 V, respectively. Phosphorus doping can enhance the electrical properties by increasing the emission current, since the field emission current (I-a) of non-doped and P-doped emitters is 4 muA (at V-gc = 45 V) and 322 muA (at V-gc = 120 V), respectively. The emission current of P-doped emitters is approximately 80-fold larger than that of non-doped diamond emitters. (C) 2001 Elsevier Science B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectfield emissionen_US
dc.subjectdiamonden_US
dc.subjectchemical vapor deposition (CVD)en_US
dc.subjectn-type dopingen_US
dc.titleFabrication and characterization of phosphorus-doped diamond field emitters in triode-type field emission arraysen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/S0925-9635(00)00606-3en_US
dc.identifier.journalDIAMOND AND RELATED MATERIALSen_US
dc.citation.volume10en_US
dc.citation.issue3-7en_US
dc.citation.spage834en_US
dc.citation.epage839en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000168730600101-
Appears in Collections:Conferences Paper


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