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dc.contributor.authorLiang, HCen_US
dc.contributor.authorChu, CSen_US
dc.date.accessioned2014-12-08T15:44:14Z-
dc.date.available2014-12-08T15:44:14Z-
dc.date.issued2001-02-01en_US
dc.identifier.issn0577-9073en_US
dc.identifier.urihttp://hdl.handle.net/11536/29869-
dc.description.abstractWe study the effect of phase randomization on the quantum transport through a finite-range time-modulated potential. The time-modulated potential leads only to coherent inelastic scatterings, and the incoherent processes are described by an S-matrix model proposed originally by Buttiker for the case of time-independent transport. This S-matrix model provides us a systematic way to reinject into the system those electrons that have suffered with incoherent scatterings. The distribution of these reinjected electrons is determined by an effective chemical potential <(<mu>)over tilde>. For comparison, we study the cases where the incoherent processes occur inside and outside the time-modulated region. The incoherent processes are found to broaden and to smear the structures in the conductance G that are associated with the coherent inelastic scatterings. However, the smearing is more effective when the incoherent processes occur inside the time-modulated potential region.en_US
dc.language.isoen_USen_US
dc.titleEffects of incoherent processes on the quantum transport through a finite-range time-modulated potentialen_US
dc.typeArticleen_US
dc.identifier.journalCHINESE JOURNAL OF PHYSICSen_US
dc.citation.volume39en_US
dc.citation.issue1en_US
dc.citation.spage64en_US
dc.citation.epage74en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000167023700006-
dc.citation.woscount0-
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