1.55-mu m and infrared-band photoresponsivity of a Schottky barrier porous silicon photodetector

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DC 欄位	值	語言
dc.contributor.author	Lee, MK	en_US
dc.contributor.author	Chu, CH	en_US
dc.contributor.author	Wang, YH	en_US
dc.contributor.author	Sze, SM	en_US
dc.date.accessioned	2014-12-08T15:44:15Z	-
dc.date.available	2014-12-08T15:44:15Z	-
dc.date.issued	2001-02-01	en_US
dc.identifier.issn	0146-9592	en_US
dc.identifier.uri	http://hdl.handle.net/11536/29881	-
dc.description.abstract	We have investigated the spectral responsivity of porous silicon Schottky barrier photodetectors in the wavelength range 0.4-1.7 mum The photodetectors show strong photoresponsivity in both the visible and the infrared bands, especially at 1.55 mum. The photocurrent can reach 1.8 mA at a reverse bias of 6 V under illumination by a 1.55-mum, 10-mW laser diode. The corresponding quantum efficiency is 14.4%. (C) 2001 Optical Society of America.	en_US
dc.language.iso	en_US	en_US
dc.title	1.55-mu m and infrared-band photoresponsivity of a Schottky barrier porous silicon photodetector	en_US
dc.type	Article	en_US
dc.identifier.journal	OPTICS LETTERS	en_US
dc.citation.volume	26	en_US
dc.citation.issue	3	en_US
dc.citation.spage	160	en_US
dc.citation.epage	162	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000166755300015	-
dc.citation.woscount	15	-
顯示於類別：	期刊論文

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