Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, WH | en_US |
dc.contributor.author | Tseng, TY | en_US |
dc.contributor.author | Hennings, D | en_US |
dc.date.accessioned | 2014-12-08T15:44:16Z | - |
dc.date.available | 2014-12-08T15:44:16Z | - |
dc.date.issued | 2001-02-01 | en_US |
dc.identifier.issn | 0957-4522 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1023/A:1011210422752 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/29885 | - |
dc.description.abstract | The effect of A/B ratio, sintering temperature, and oxygen partial pressure on microstructure and ceramic dielectric properties of 1 mol % MnO2 doped (Ba,Ca)(Ti,Zr,)O-3 sintered in a reducing atmosphere were investigated. Microstructure is found to be closely related to processing parameters. With decreasing A/B ratio, decreasing oxygen partial pressure and increasing sintering temperature, grain growth is enhanced. Concurrent with the grain size reduction, the crystal structure transformed from tetragonal to pseudocubic at room temperature and the dielectric constant, the dissipation factor and Curie point all decreased. However, the effects of grain size give a marked discrepancy on breakdown. The effect of A/B ratio and sintering temperature both suggest that breakdown voltage is decreased with increasing grain size. However, the breakdown voltage in relation to grain size by changing the oxygen partial pressure seems to show no significant difference. (C) 2001 Kluwer Academic Publishers. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Effects of ceramic processing parameters on the microstructure and dielectric properties of (Ba1-xCax)(Ti0.99-y, ZryMn0.01)O-3 sintered in a reducing atmosphere | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1023/A:1011210422752 | en_US |
dc.identifier.journal | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | en_US |
dc.citation.volume | 12 | en_US |
dc.citation.issue | 2 | en_US |
dc.citation.spage | 123 | en_US |
dc.citation.epage | 130 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000168537100008 | - |
dc.citation.woscount | 14 | - |
Appears in Collections: | Articles |
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