Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cheng, YC | en_US |
dc.contributor.author | Chi, S | en_US |
dc.contributor.author | Huang, KF | en_US |
dc.date.accessioned | 2014-12-08T15:44:16Z | - |
dc.date.available | 2014-12-08T15:44:16Z | - |
dc.date.issued | 2001-02-01 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.40.736 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/29891 | - |
dc.description.abstract | We report on the growth of InGaP by solid-source molecular-beam epitaxy. It is revealed by photoluminescence (PL) that a lower effective band-gap energy appeared when a higher phosphorus cracker temperature was used. Temperature-dependent PL and polarized photoreflectance (PR) also exhibited a weaker atomic ordering effect when the phosphorus cracker temperature increased. Since the variation of the phosphorus cracker temperature significantly changed the P-2/P-4 ratio, we believe that a more chemically reactive P-2 will not only incorporate more In atoms into the epilayer, but will also bring about a smaller composition fluctuation and weaker ordering effect. Therefore, InGaP grown under a more P-2-rich condition probably has a higher In content which results in a lower band-gap energy instead of the ordering effect. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | SSMBE | en_US |
dc.subject | photoluminescence | en_US |
dc.subject | photoreflectance | en_US |
dc.subject | InGaP | en_US |
dc.subject | ordering | en_US |
dc.title | Phosphorus-species-induced band-gap anomaly in InGaP grown by solid-source molecular-beam epitaxy | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1143/JJAP.40.736 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | en_US |
dc.citation.volume | 40 | en_US |
dc.citation.issue | 2A | en_US |
dc.citation.spage | 736 | en_US |
dc.citation.epage | 739 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000168355600059 | - |
dc.citation.woscount | 0 | - |
Appears in Collections: | Articles |
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