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dc.contributor.authorPan, YCen_US
dc.contributor.authorWang, SFen_US
dc.contributor.authorLee, WHen_US
dc.contributor.authorLee, MCen_US
dc.contributor.authorChen, WKen_US
dc.contributor.authorChen, WHen_US
dc.contributor.authorJang, LYen_US
dc.contributor.authorLee, JFen_US
dc.contributor.authorChiang, CIen_US
dc.contributor.authorChang, Hen_US
dc.contributor.authorWu, KTen_US
dc.contributor.authorLin, DSen_US
dc.date.accessioned2014-12-08T15:44:18Z-
dc.date.available2014-12-08T15:44:18Z-
dc.date.issued2001-01-01en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1337636en_US
dc.identifier.urihttp://hdl.handle.net/11536/29907-
dc.description.abstractGa K-edge x-ray absorption measurements were employed to investigate Mg-doping effects in GaN samples. Strong polarization-dependent x-ray absorption near-edge structures become less pronounced with increasing doping concentration, indicating the formation of a mixing-phase structure of cubic and hexagonal phases. Analysis of the extended x-ray absorption region of the spectra revealed doping-related defects such as vacancies, substitutions, and interstitial occupations. They were formed anisotropically in the crystal c axis direction and its perpendiculars. Disorderliness arising from phase mix and defects is believed to have lowered the Debye temperature of the doped GaN films and caused the destructive interference of the absorption fine-structure oscillation functions. These effects were taken into account for the observed large coordination number reductions in our samples. (C) 2001 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleGallium K-edge x-ray absorption study on Mg-doped GaNen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.1337636en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume78en_US
dc.citation.issue1en_US
dc.citation.spage31en_US
dc.citation.epage33en_US
dc.contributor.department电子物理学系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000166122000011-
dc.citation.woscount4-
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