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dc.contributor.authorWang, K. Y.en_US
dc.contributor.authorHuang, W. P.en_US
dc.contributor.authorLin, T. C.en_US
dc.contributor.authorLee, C. P.en_US
dc.contributor.authorSung, Y. T.en_US
dc.contributor.authorNicholas, R. J.en_US
dc.contributor.authorCheng, H. H.en_US
dc.date.accessioned2014-12-08T15:44:33Z-
dc.date.available2014-12-08T15:44:33Z-
dc.date.issued2008-03-01en_US
dc.identifier.issn1386-9477en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.physe.2007.09.163en_US
dc.identifier.urihttp://hdl.handle.net/11536/30065-
dc.description.abstractUsing magneto-luminescence (ML) measurement, we have observed the formation of magneto-excitons with either type-I or type-II band alignment depending on the strain distribution in the Si/SiGe quantum well structures. This observation is consistent with the analysis of strain-induced band shifting and exciton-transition energy. (c) 2007 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectSi/Ge heterostructureen_US
dc.subjectmagneto-luminescenceen_US
dc.subjectband alignmenten_US
dc.titleType-I/type-II exciton in strained Si/SiGe multi-QWsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.physe.2007.09.163en_US
dc.identifier.journalPHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURESen_US
dc.citation.volume40en_US
dc.citation.issue5en_US
dc.citation.spage1430en_US
dc.citation.epage1433en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000254646400152-
Appears in Collections:Conferences Paper


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