High-power diode-end-pumped Nd : YVO4 laser: thermally induced fracture versus pump-wavelength sensitivity

doi:10.1007/s003400000410

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DC 欄位	值	語言
dc.contributor.author	Chen, YF	en_US
dc.contributor.author	Lan, YP	en_US
dc.contributor.author	Wang, SC	en_US
dc.date.accessioned	2014-12-08T15:44:33Z	-
dc.date.available	2014-12-08T15:44:33Z	-
dc.date.issued	2000-12-01	en_US
dc.identifier.issn	0946-2171	en_US
dc.identifier.uri	http://dx.doi.org/10.1007/s003400000410	en_US
dc.identifier.uri	http://hdl.handle.net/11536/30066	-
dc.description.abstract	We report two kinds of compact and efficient diode-end-pumped TEM00 lasers with output power > 25 W at approximate to 50 W of incident pump power. One laser consists of a single 0.3 at. % Nd:YVO4 crystal in a V-type cavity, the other laser includes two 0.5 at. % Nd:YVO4 crystals in a linear cavity. Experimental results show that lowering Nd3+ concentration can be beneficial in extending the fracture-limited pump power but it also increases the sensitivity of the pump wavelength due to the overlapping efficiency.	en_US
dc.language.iso	en_US	en_US
dc.title	High-power diode-end-pumped Nd : YVO4 laser: thermally induced fracture versus pump-wavelength sensitivity	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1007/s003400000410	en_US
dc.identifier.journal	APPLIED PHYSICS B-LASERS AND OPTICS	en_US
dc.citation.volume	71	en_US
dc.citation.issue	6	en_US
dc.citation.spage	827	en_US
dc.citation.epage	830	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000165666600008	-
dc.citation.woscount	15	-
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