标题: Effect of aluminum seed layer on the crystallographic texture and electromigration resistance of physical vapor deposited copper interconnect
作者: Chin, YL
Chiou, BS
Wu, WF
电子工程学系及电子研究所
Department of Electronics Engineering and Institute of Electronics
关键字: Cu films;seed layer;crystallographic texture;reliability;interconnect;electromigration;Cu/Al bilayer
公开日期: 1-十二月-2000
摘要: The effects of an Al underlayer with respect to texture control and electromigration (EM) resistance of Cu films are investigated in this study. The Al underlayer enhances the (111) texture of Cu films and the surface smoothness of the annealed Cu film. The same cubic crystal structure (face-centercd cubic) and small difference of the nearest interatomic distance of the (111) plane between Cu and Al result in the increase of the peak ratio I((111))/I-(200) of Cu films. The thicker the Al film, the more preferred the Cu (111) orientation. The resistivity of the Cu/AI bilayer film, which increases at about 0.2 mu Omega .cm per 1-nm-thick Al underlayer, is smaller than the reported value of single phase Cu(Al) solution. The EM resistance of Cu interconnects is also improved when the Al underlayer is present. The mean time to failure (MTF) of Cu interconnects with a 5-nm-thick Al underlayer is longer by one order of magnitude than that without an Al underlayer at 240 degreesC and 12 MA/cm(2).
URI: http://dx.doi.org/10.1143/JJAP.39.6708
http://hdl.handle.net/11536/30079
ISSN: 0021-4922
DOI: 10.1143/JJAP.39.6708
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 39
Issue: 12A
起始页: 6708
结束页: 6715
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