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dc.contributor.authorTing, JHen_US
dc.contributor.authorSu, JCen_US
dc.contributor.authorSu, SYen_US
dc.date.accessioned2014-12-08T15:44:35Z-
dc.date.available2014-12-08T15:44:35Z-
dc.date.issued2000-12-01en_US
dc.identifier.issn0167-9317en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0167-9317(99)00450-5en_US
dc.identifier.urihttp://hdl.handle.net/11536/30105-
dc.description.abstractIn this study, the pattern of a 4 mm diameter diffractive optical element with linewidth ranging from 12 to 0.5 mum was adopted. With the SiO2 layer as the etch hard mask, silicon was etched based on HBr chemistry with additions of O-2 and SF6 . The effects of O-2 content on the sidewall anisotropy, etch rate, and etch selectivity over the SiO2 mask were also examined. The RIE lag, where etching of a small trench (hole) lags behind a large trench (hole), was investigated to produce an optimum aspect ratio for each zone of the diffractive optical element. The regression relation of the etch depth versus zone width was determined as a guideline for the feasibility of this method. (C) 2000 Elsevier Science B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectRIE lagen_US
dc.subjectdiffractive optical elementsen_US
dc.subjectanisotropic etchingen_US
dc.titleRTE lag in diffractive optical element etchingen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/S0167-9317(99)00450-5en_US
dc.identifier.journalMICROELECTRONIC ENGINEERINGen_US
dc.citation.volume54en_US
dc.citation.issue3-4en_US
dc.citation.spage315en_US
dc.citation.epage322en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000166094400011-
dc.citation.woscount3-
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