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dc.contributor.authorChu, CFen_US
dc.contributor.authorYu, CCen_US
dc.contributor.authorWang, YKen_US
dc.contributor.authorTsai, JYen_US
dc.contributor.authorLai, FIen_US
dc.contributor.authorWang, SCen_US
dc.date.accessioned2014-12-08T15:44:38Z-
dc.date.available2014-12-08T15:44:38Z-
dc.date.issued2000-11-20en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/11536/30129-
dc.description.abstractIn this letter, a low-resistance ohmic contact on p-type GaN using an alloy of Ni/Pd/Au is reported. The Mg doped p-type GaN samples were grown by metalorganic chemical vapor deposition with a carrier concentration of 4.1x10(17) cm(-3). The as-grown Mg doped samples were deposited with Ni (20 nm)/Pd (20 nm)/Au (100 nm) and then annealed in air, nitrogen, and oxygen ambient conditions at different annealing temperatures ranging from 350 to 650 degreesC. Linear I-V ohmic characteristics were observed with specific resistance as low as 1.0x10(-4) Omega cm(2) for the samples annealed in oxygen atmosphere. Similar contact metal composition was also deposited on Be-implanted p-type GaN samples with a carrier density of 8.1x10(19) cm(-3). Without further annealing process, the samples show good ohmic contact with a lowest specific resistance of 4.5x10(-6) Omega cm(2). (C) 2000 American Institute of Physics. [S0003-6951(00)01847-7].en_US
dc.language.isoen_USen_US
dc.titleLow-resistance ohmic contacts on p-type GaN using Ni/Pd/Au metallizationen_US
dc.typeArticleen_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume77en_US
dc.citation.issue21en_US
dc.citation.spage3423en_US
dc.citation.epage3425en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000165395900036-
dc.citation.woscount42-
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